Assignee
FEILCHENFELD NATALIE B
US·4 granted patents·4 citations·filing 2008–2012
Top patents by PatentIndex Score
4 records- 0173US8236662B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2010·Granted Aug 7, 2012·3 cites·20 claims
- 0262US8114750B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2008·Granted Feb 14, 2012·1 cites·12 claims
- 0350US8525293B2Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integrationFEILCHENFELD NATALIE B·Filed 2012·Granted Sep 3, 2013·0 cites·20 claims
- 0448US8946013B2Lateral diffusion field effect transistor with drain region self-aligned to gate electrodeFEILCHENFELD NATALIE B·Filed 2012·Granted Feb 3, 2015·0 cites·17 claims
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