Assignee
FREIBERGER COMPOUND MAT GMBH
DE·28 granted patents·8 pending applications·371 citations·filing 2000–2022
Top patents by PatentIndex Score
36 records- 0195US7727332B2Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained therebyFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Jun 1, 2010·267 cites·20 claims
- 0290US7556688B2Method for achieving low defect density AlGaN single crystal boulesFREIBERGER COMPOUND MAT GMBH·Filed 2005·Granted Jul 7, 2009·15 cites·37 claims
- 0387US7410540B2Process for the manufacture of doped semiconductor single crystals, and III-V semiconductor single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Aug 12, 2008·8 cites·14 claims
- 0484US9368585B2Arrangement and method for manufacturing a crystal from a melt of a raw material and single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Jun 14, 2016·8 cites·8 claims
- 0579US9461121B2Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as suchFREIBERGER COMPOUND MAT GMBH·Filed 2014·Granted Oct 4, 2016·4 cites·18 claims
- 0678US11170989B2Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneityFREIBERGER COMPOUND MAT GMBH·Filed 2018·Granted Nov 9, 2021·2 cites·5 claims
- 0778US10460924B2Process for producing a gallium arsenide substrate which includes marangoni dryingFREIBERGER COMPOUND MAT GMBH·Filed 2014·Granted Oct 29, 2019·4 cites·10 claims
- 0874US8025729B2Device and process for heating III-V wafers, and annealed III-V semiconductor single crystal waferFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Sep 27, 2011·5 cites·22 claims
- 0972US6355910B1Heating element for heating crucibles and arrangement of heating elementsFREIBERGER COMPOUND MAT GMBH·Filed 2000·Granted Mar 12, 2002·18 cites·17 claims
- 1071US6923171B2Device and method for determining the orientation of a crystallographic plane in relation to a crystal surface and device for cutting a single crystal in a cutting machineFREIBERGER COMPOUND MAT GMBH·Filed 2002·Granted Aug 2, 2005·13 cites·23 claims
- 1170US12205815B2Gallium arsenide substrate comprising a surface oxide layer with improved surface homogeneityFREIBERGER COMPOUND MAT GMBH·Filed 2021·Granted Jan 21, 2025·0 cites·5 claims
- 1269US7137865B2Method and device for cutting single crystals, in addition to an adjusting device and a test method for determining a crystal orientationFREIBERGER COMPOUND MAT GMBH·Filed 2001·Granted Nov 21, 2006·12 cites·9 claims
- 1367US10309037B2Method for producing III-N templates and the reprocessing thereof and III-N templateFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Jun 4, 2019·1 cites·17 claims
- 1466US7998273B2Method for producing III-N layers, and III-N layers or III-N substrates, and devices based thereonFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Aug 16, 2011·2 cites·18 claims
- 1564US12168839B2Growth of A-B crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2020·Granted Dec 17, 2024·0 cites·13 claims
- 1664US8815392B2Process for producing doped gallium arsenide substrate wafers having low optical absorption coefficientFREIBERGER COMPOUND MAT GMBH·Filed 2012·Granted Aug 26, 2014·0 cites·16 claims
- 1764US8372199B2Bulk GaN and AlGaN single crystalsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Granted Feb 12, 2013·0 cites·2 claims
- 1864US7195542B2Process, apparatus and slurry for wire sawingFREIBERGER COMPOUND MAT GMBH·Filed 2006·Granted Mar 27, 2007·5 cites·25 claims
- 1964US2009286063A2Method and apparatus for fabricating crack-free group iii nitride semiconductor materialsFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 2063US10883191B2Method for producing III-N templates and the reprocessing thereof and III-N templateFREIBERGER COMPOUND MAT GMBH·Filed 2019·Granted Jan 5, 2021·0 cites·14 claims
- 2162US8048224B2Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrateFREIBERGER COMPOUND MAT GMBH·Filed 2007·Granted Nov 1, 2011·3 cites·21 claims
- 2261US10662549B2Growth of A-B crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2016·Granted May 26, 2020·0 cites·19 claims
- 2361US7585772B2Process for smoothening III-N substratesFREIBERGER COMPOUND MAT GMBH·Filed 2007·Granted Sep 8, 2009·2 cites·12 claims
- 2457US2022325435A1Growth of a-b crystals without crystal lattice curvatureFREIBERGER COMPOUND MAT GMBH·Filed 2022·Application pending·0 cites
- 2554US10584427B2Processes for producing III-N single crystals, and III-N single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2018·Granted Mar 10, 2020·0 cites·14 claims
- 2653US2009286331A2Method for simulatenously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown therebyFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 2750US2008203408A1PROCESS FOR PRODUCING (Al, Ga)lnN CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 2850US2008203409A1PROCESS FOR PRODUCING (Al, Ga)N CRYSTALSFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 2949US9896779B2Method for producing III-N single crystals, and III-N single crystalFREIBERGER COMPOUND MAT GMBH·Filed 2013·Granted Feb 20, 2018·0 cites·20 claims
- 3049US6358315B1Method and apparatus for producing monocrystalsFREIBERGER COMPOUND MAT GMBH·Filed 2000·Granted Mar 19, 2002·2 cites·16 claims
- 3146US11505847B2Method and apparatus for Ga-recoveryFREIBERGER COMPOUND MAT GMBH·Filed 2017·Granted Nov 22, 2022·0 cites·20 claims
- 3246US2009064982A1Workpiece mounting and method for wire sawingFREIBERGER COMPOUND MAT GMBH·Filed 2008·Application pending·0 cites
- 3345US11965266B2Device and method of manufacturing AIII-BV-crystals and substrate wafers manufactured thereof free of residual stress and dislocationsFREIBERGER COMPOUND MAT GMBH·Filed 2020·Granted Apr 23, 2024·0 cites·19 claims
- 3442US10767255B2Device and method of evaporating a material from a metal meltFREIBERGER COMPOUND MAT GMBH·Filed 2012·Granted Sep 8, 2020·0 cites·20 claims
- 3542US2007141814A1Process for producing a free-standing iii-n layer, and free-standing iii-n substrateFREIBERGER COMPOUND MAT GMBH·Filed 2006·Application pending·0 cites
- 3638US2008171133A1Method For the Production of C-Plane Oriented Gan Substrates or AlxGa1-xN SubstratesFREIBERGER COMPOUND MAT GMBH·Filed 2006·Application pending·0 cites
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