Assignee

FUCHIGAMI NOBI

US·1 granted patent·1 citations·filing 2011–2011

Technology mixH10B1 H10N1

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0163US8481338B2ALD processing techniques for forming non-volatile resistive-switching memoriesFUCHIGAMI NOBI·Filed 2011·Granted Jul 9, 2013·1 cites·20 claims

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