Assignee
FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD
CN·101 granted patents·86 pending applications·27 citations·filing 2019–2025
Top patents by PatentIndex Score
187 records- 0196US12057396B2Semiconductor device having an air gap between a contact pad and a sidewall of contact holeFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Aug 6, 2024·2 cites·10 claims
- 0294US11825644B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·12 claims
- 0394US11600622B2Method of forming semiconductor memory device comprises a bit line having a plurality of pins extending along a direction being perpendicular to a substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·18 claims
- 0493US11665885B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted May 30, 2023·2 cites·11 claims
- 0593US11380754B2Manufacturing method of semiconductor device and semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jul 5, 2022·2 cites·14 claims
- 0692US11557645B2Semiconductor memory device and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jan 17, 2023·3 cites·20 claims
- 0791US11818880B2Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Nov 14, 2023·1 cites·20 claims
- 0891US2026068149A1Method of fabricating semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 0990US2026075803A1Method of fabricating semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 1087US11784184B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Oct 10, 2023·1 cites·20 claims
- 1186US11074965B2Memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2019·Granted Jul 27, 2021·5 cites·17 claims
- 1286US2025349715A1Semiconductor device and method for preparing semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 1385US11903181B2Semiconductor structure and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Feb 13, 2024·1 cites·14 claims
- 1485US2025016982A1Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1584US12419039B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Sep 16, 2025·0 cites·16 claims
- 1684US12245420B2Method for forming semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Mar 4, 2025·0 cites·11 claims
- 1784US11967571B2Semiconductor structure and forming method thereforFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Apr 23, 2024·2 cites·17 claims
- 1883US12400958B2Method for forming semiconductor device having an air gap between a contact pad and a sidewall of contact holeFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·10 claims
- 1983US12133373B2Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·11 claims
- 2082US11289153B2Memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Mar 29, 2022·1 cites·20 claims
- 2180US12396152B2Semiconductor structure and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Aug 19, 2025·0 cites·20 claims
- 2280US12237369B2Semiconductor device with shallow trench isolation having multi-stacked layers and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Feb 25, 2025·0 cites·12 claims
- 2380US2025351405A1Method of fabricating semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 2479US2026047062A1Semiconductor structure and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 2578US12114487B2Semiconductor memory device having bit lines and isolation fins disposed on the substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·19 claims
- 2678US12100617B2Method of manufacturing semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·5 claims
- 2778US12062689B2Manufacturing method of capacitor structureFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 2878US11509313B1Delay-locked loop circuit with multiple modesFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Nov 22, 2022·1 cites·20 claims
- 2978US2024395605A1Method of manufacturing semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3077US11374010B2Memory device and method of fabricating sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Jun 28, 2022·1 cites·19 claims
- 3176US12495545B2Semiconductor memory device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·20 claims
- 3276US12150291B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 3376US2026068164A1Method for fabricating three-dimensional memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 3476US2025120066A1Semiconductor memory device and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3575US12408331B2Memory device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Sep 2, 2025·0 cites·18 claims
- 3675US12261136B2Semiconductor structureFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Mar 25, 2025·0 cites·10 claims
- 3775US2026059810A1Semiconductor structureFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 3874US12256533B2Semiconductor memory device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 3974US12200923B2Method of fabricating semiconductor device having bit line comprising a plurality of pins extending toward the substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·7 claims
- 4073US12156399B2Semiconductor memory device having plug and wireFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·11 claims
- 4173US12004340B2Semiconductor memory device and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 4273US2024244818A1Method of fabricating semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 4373US2025133783A1Shallow trench isolation structure and semiconductor device with the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 4472US12513891B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·10 claims
- 4572US12381082B2Semiconductor structure, method for fabricating thereof, and method for fabricating semiconductor layoutFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·10 claims
- 4672US12224283B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 4772US12191299B2Method of fabricating semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·10 claims
- 4872US2024268097A1Semiconductor memory device and method for forming semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 4972US2024224499A1Semiconductor memory device and method for forming semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 5071US11824087B2Shallow trench isolation structure and semiconductor device with the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·8 claims
Showing the top 50 of 187 patent records by PatentIndex Score.
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