Assignee
FUJIKAWA KAZUHIRO
JP·7 granted patents·4 pending applications·23 citations·filing 2005–2012
Top patents by PatentIndex Score
11 records- 0184US8623752B2Ohmic electrode for SiC semiconductor, method of manufacturing ohmic electrode for SiC semiconductor, semiconductor device, and method of manufacturing semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2007·Granted Jan 7, 2014·11 cites·10 claims
- 0278US8760223B2Switching circuitFUJIKAWA KAZUHIRO·Filed 2012·Granted Jun 24, 2014·6 cites·11 claims
- 0370US8624303B2Field effect transistorFUJIKAWA KAZUHIRO·Filed 2010·Granted Jan 7, 2014·3 cites·9 claims
- 0466US8697555B2Method of producing semiconductor device and semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2008·Granted Apr 15, 2014·2 cites·12 claims
- 0559US8557711B2Etching solution composition for metal filmsFUJIKAWA KAZUHIRO·Filed 2009·Granted Oct 15, 2013·1 cites·11 claims
- 0649US8643065B2Semiconductor device and method for manufacturing the sameFUJIKAWA KAZUHIRO·Filed 2009·Granted Feb 4, 2014·0 cites·5 claims
- 0745US2012037924A1Junction Field-Effect TransistorFUJIKAWA KAZUHIRO·Filed 2011·Application pending·0 cites
- 0844US2009152566A1Junction field-effect transistorFUJIKAWA KAZUHIRO·Filed 2005·Application pending·0 cites
- 0938US2012138958A1Silicon carbide semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2011·Application pending·0 cites
- 1036US2012056203A1Semiconductor deviceFUJIKAWA KAZUHIRO·Filed 2010·Application pending·0 cites
- 1133US8766699B2Switching circuitFUJIKAWA KAZUHIRO·Filed 2012·Granted Jul 1, 2014·0 cites·2 claims
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