Assignee
FUJIWARA SHINSUKE
JP·7 granted patents·5 pending applications·9 citations·filing 2007–2012
Top patents by PatentIndex Score
12 records- 0184US8697564B2Method of manufacturing GaN-based filmFUJIWARA SHINSUKE·Filed 2011·Granted Apr 15, 2014·2 cites·4 claims
- 0283US8598685B2GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereofFUJIWARA SHINSUKE·Filed 2010·Granted Dec 3, 2013·5 cites·15 claims
- 0380US8501592B2Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrateFUJIWARA SHINSUKE·Filed 2011·Granted Aug 6, 2013·1 cites·22 claims
- 0466US8574364B2GaN-crystal free-standing substrate and method for producing the sameFUJIWARA SHINSUKE·Filed 2011·Granted Nov 5, 2013·1 cites·4 claims
- 0555US8546166B2III nitride crystal substrate, and light-emitting device and method of its manufactureFUJIWARA SHINSUKE·Filed 2008·Granted Oct 1, 2013·0 cites·6 claims
- 0653US8476086B2Semiconductor device and method of its manufactureFUJIWARA SHINSUKE·Filed 2007·Granted Jul 2, 2013·0 cites·9 claims
- 0751US8253162B2GaN substrate and light-emitting deviceFUJIWARA SHINSUKE·Filed 2010·Granted Aug 28, 2012·0 cites·4 claims
- 0849US2013061801A1Method for manufacturing silicon carbide crystalFUJIWARA SHINSUKE·Filed 2012·Application pending·0 cites
- 0949US2012118226A1Method of Synthesizing Nitride Semiconductor Single-Crystal SubstrateFUJIWARA SHINSUKE·Filed 2012·Application pending·0 cites
- 1041US2013056752A1Silicon carbide substrate, silicon carbide substrate manufacturing method, and semiconductor device manufacturing methodFUJIWARA SHINSUKE·Filed 2012·Application pending·0 cites
- 1139US2012118222A1METHOD OF MANUFACTURING GaN-BASED FILMFUJIWARA SHINSUKE·Filed 2011·Application pending·0 cites
- 1238US2012074403A1METHOD FOR GROWING GaN CRYSTAL AND GaN CRYSTAL SUBSTRATEFUJIWARA SHINSUKE·Filed 2011·Application pending·0 cites
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