Assignee
FUKAZAWA ATSUKI
JP·6 granted patents·1 pending application·2,181 citations·filing 2006–2012
Top patents by PatentIndex Score
7 records- 0198US8784950B2Method for forming aluminum oxide film using Al compound containing alkyl group and alkoxy or alkylamine groupFUKAZAWA ATSUKI·Filed 2012·Granted Jul 22, 2014·519 cites·7 claims
- 0298US8722546B2Method for forming silicon-containing dielectric film by cyclic deposition with side wall coverage controlFUKAZAWA ATSUKI·Filed 2012·Granted May 13, 2014·554 cites·20 claims
- 0398US8563443B2Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogenFUKAZAWA ATSUKI·Filed 2012·Granted Oct 22, 2013·525 cites·16 claims
- 0498US8329599B2Method of depositing dielectric film by ALD using precursor containing silicon, hydrocarbon, and halogenFUKAZAWA ATSUKI·Filed 2011·Granted Dec 11, 2012·575 cites·20 claims
- 0585US8080282B2Method for forming silicon carbide film containing oxygenFUKAZAWA ATSUKI·Filed 2006·Granted Dec 20, 2011·6 cites·9 claims
- 0663US8765233B2Method for forming low-carbon CVD film for filling trenchesFUKAZAWA ATSUKI·Filed 2008·Granted Jul 1, 2014·2 cites·14 claims
- 0740US2013224964A1Method for Forming Dielectric Film Containing Si-C bonds by Atomic Layer Deposition Using Precursor Containing Si-C-Si bondFUKAZAWA ATSUKI·Filed 2012·Application pending·0 cites
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