Assignee
GAUTHIER JR ROBERT J
US·9 granted patents·16 citations·filing 2007–2012
Top patents by PatentIndex Score
9 records- 0178US8759194B2Device structures compatible with fin-type field-effect transistor technologiesGAUTHIER JR ROBERT J·Filed 2012·Granted Jun 24, 2014·3 cites·18 claims
- 0273US8230382B2Model based simulation of electronic discharge and optimization methodology for design checkingGAUTHIER JR ROBERT J·Filed 2010·Granted Jul 24, 2012·4 cites·20 claims
- 0370US8815654B2Vertical current controlled silicon on insulator (SOI) device such as a silicon controlled rectifier and method of forming vertical SOI current controlled devicesGAUTHIER JR ROBERT J·Filed 2007·Granted Aug 26, 2014·4 cites·39 claims
- 0467US8514535B2Electrostatic discharge device control and structureGAUTHIER JR ROBERT J·Filed 2011·Granted Aug 20, 2013·2 cites·21 claims
- 0561US8614121B2Method of manufacturing back gate triggered silicon controlled rectifiersGAUTHIER JR ROBERT J·Filed 2011·Granted Dec 24, 2013·1 cites·13 claims
- 0661US8138546B2Electrostatic discharge protection device and method of fabricating sameGAUTHIER JR ROBERT J·Filed 2008·Granted Mar 20, 2012·1 cites·10 claims
- 0760US9058995B2Self-protected drain-extended metal-oxide-semiconductor transistorGAUTHIER JR ROBERT J·Filed 2012·Granted Jun 16, 2015·1 cites·20 claims
- 0853US8390068B2Electrostatic discharge protection device and method of fabricating sameGAUTHIER JR ROBERT J·Filed 2012·Granted Mar 5, 2013·0 cites·21 claims
- 0938US8610217B2Self-protected electrostatic discharge field effect transistor (SPESDFET), an integrated circuit incorporating the SPESDFET as an input/output (I/O) pad driver and associated methods of forming the SPESDFET and the integrated circuitGAUTHIER JR ROBERT J·Filed 2010·Granted Dec 17, 2013·0 cites·10 claims
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