Assignee
GREEN BRUCE M
US·12 granted patents·1 pending application·68 citations·filing 2006–2015
Top patents by PatentIndex Score
13 records- 0193US8946779B2MISHFET and Schottky device integrationGREEN BRUCE M·Filed 2013·Granted Feb 3, 2015·17 cites·15 claims
- 0290US10249615B2MISHFET and Schottky device integrationGREEN BRUCE M·Filed 2015·Granted Apr 2, 2019·7 cites·22 claims
- 0387US9685345B2Semiconductor devices with integrated Schottky diodes and methods of fabricationGREEN BRUCE M·Filed 2013·Granted Jun 20, 2017·6 cites·19 claims
- 0486US8946776B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Feb 3, 2015·6 cites·18 claims
- 0583US8193591B2Transistor and method with dual layer passivationGREEN BRUCE M·Filed 2006·Granted Jun 5, 2012·10 cites·17 claims
- 0681US9099433B2High speed gallium nitride transistor devicesGREEN BRUCE M·Filed 2012·Granted Aug 4, 2015·5 cites·16 claims
- 0781US9029986B2Transistors with dual layer passivationGREEN BRUCE M·Filed 2012·Granted May 12, 2015·5 cites·12 claims
- 0878US9153448B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2015·Granted Oct 6, 2015·2 cites·20 claims
- 0977US9438224B2Devices with signal characteristic dependent control circuitry and methods of operation thereforGREEN BRUCE M·Filed 2014·Granted Sep 6, 2016·3 cites·22 claims
- 1075US8653558B2Semiconductor device and method of makingGREEN BRUCE M·Filed 2011·Granted Feb 18, 2014·4 cites·20 claims
- 1173US9111868B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Aug 18, 2015·2 cites·17 claims
- 1262US8592878B2Semiconductor devices with low leakage Schottky contactsGREEN BRUCE M·Filed 2011·Granted Nov 26, 2013·1 cites·12 claims
- 1336US2012156843A1Dielectric layer for gallium nitride transistorGREEN BRUCE M·Filed 2010·Application pending·0 cites
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