Assignee
HAN SANG M
US·9 granted patents·2 pending applications·99 citations·filing 2005–2016
Top patents by PatentIndex Score
11 records- 0196US8105471B1Nanofluidics for bioseparation and analysisHAN SANG M·Filed 2005·Granted Jan 31, 2012·65 cites·69 claims
- 0284US9269724B2Semiconductor device comprising epitaxially grown semiconductor material and an air gapHAN SANG M·Filed 2014·Granted Feb 23, 2016·6 cites·12 claims
- 0383US8242003B1Defect removal in Ge grown on SiHAN SANG M·Filed 2011·Granted Aug 14, 2012·7 cites·20 claims
- 0481US9269569B1Low defect density lattice-mismatched semiconductor devices and methods of fabricating sameHAN SANG M·Filed 2012·Granted Feb 23, 2016·6 cites·20 claims
- 0581US8937366B1Selective epitaxial overgrowth comprising air gapsHAN SANG M·Filed 2012·Granted Jan 20, 2015·5 cites·11 claims
- 0673US9666431B1Large-scale patterning of germanium quantum dots by stress transferHAN SANG M·Filed 2016·Granted May 30, 2017·2 cites·21 claims
- 0773US8338301B1Slurry-free chemical mechanical planarization (CMP) of engineered germanium-on-silicon wafersHAN SANG M·Filed 2009·Granted Dec 25, 2012·6 cites·8 claims
- 0872US9373547B1Large-scale patterning of germanium quantum dots by stress transferHAN SANG M·Filed 2015·Granted Jun 21, 2016·2 cites·21 claims
- 0960US8623192B2High resolution focusing and separation of proteins in nanofluidic channelsHAN SANG M·Filed 2009·Granted Jan 7, 2014·0 cites·14 claims
- 1047US2008251382A1Separation and extreme size-focusing of nanoparticles through nanochannels based on controlled electrolytic ph manipulationHAN SANG M·Filed 2008·Application pending·0 cites
- 1140US2006073681A1Nanoheteroepitaxy of Ge on Si as a foundation for group III-V and II-VI integrationHAN SANG M·Filed 2005·Application pending·0 cites
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