Assignee
HANAWA KENZO
JP·4 granted patents·35 citations·filing 2008–2012
Top patents by PatentIndex Score
4 records- 0189US8309982B2Group-III nitride semiconductor light-emitting device, method for manufacturing the same, and lampHANAWA KENZO·Filed 2009·Granted Nov 13, 2012·14 cites·8 claims
- 0287US8471266B2Group III nitride semiconductor multilayer structure and production method thereofHANAWA KENZO·Filed 2012·Granted Jun 25, 2013·7 cites·18 claims
- 0387US8211727B2Group III nitride semiconductor multilayer structure and production method thereofHANAWA KENZO·Filed 2009·Granted Jul 3, 2012·11 cites·17 claims
- 0470US8097482B2Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lampHANAWA KENZO·Filed 2008·Granted Jan 17, 2012·3 cites·21 claims
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