Assignee
HANGZHOU HFC SEMICONDUCTOR CO
CN·2 granted patents·19 pending applications·0 citations·filing 2023–2025
Top patents by PatentIndex Score
21 records- 0160US2025331163A1Semiconductor memory device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0257US2026016285A1Scattering measurement method and scattering measurement deviceHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0357US2025366083A1Son device and manufacturing method thereofHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0455US12593435B2eDRAM and method for making sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2023·Granted Mar 31, 2026·0 cites·11 claims
- 0555US2025386496A1Three-dimensional memoryHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0655US2026047171A1Semiconductor device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0754US2025311210A1Flash memory device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0854US2025366021A1Pdsoi transistor and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 0953US2025366020A1Pdsoi transistor and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1053US2025294841A1Nfet device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1152US2025142844A1Semiconductor structure and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2023·Application pending·0 cites
- 1252US2025120067A1Edram and method for making sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2023·Application pending·0 cites
- 1351US2025386495A1Method for manufacturing a three-dimensional memoryHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1450US2026058550A1Charge pump voltage regulator circuitHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1548US12538765B2Method of making soi device from bulk silicon substrate and soi deviceHANGZHOU HFC SEMICONDUCTOR CO·Filed 2023·Granted Jan 27, 2026·0 cites·11 claims
- 1648US2025316493A1Semiconductor device and method for manufacturing the sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1747US2025374637A1Semiconductor device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1846US2026047201A1Cmos device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 1946US2025120164A1Multi-threshold voltage semiconductor device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2023·Application pending·0 cites
- 2046US2025316484A1Semiconductor device and method for fabricating sameHANGZHOU HFC SEMICONDUCTOR CO·Filed 2024·Application pending·0 cites
- 2141US2026053036A1Method of forming bonding contact, bonding structure and semiconductor deviceHANGZHOU HFC SEMICONDUCTOR CO·Filed 2025·Application pending·0 cites
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