Assignee
HANGZHOU SILAN INTEGRATED CIRCUIT CO LTD
CN·6 granted patents·3 citations·filing 2013–2020
Top patents by PatentIndex Score
6 records- 0180US11305985B2MEMS device and manufacturing method thereofHANGZHOU SILAN INTEGRATED CIRCUIT CO LTD·Filed 2019·Granted Apr 19, 2022·3 cites·30 claims
- 0260US10513431B2Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereofHANGZHOU SILAN INTEGRATED CIRCUIT CO LTD·Filed 2018·Granted Dec 24, 2019·0 cites·15 claims
- 0350US10081541B2Multiple silicon trenches forming method for MEMS sealing cap wafer and etching mask structure thereofHANGZHOU SILAN INTEGRATED CIRCUIT CO LTD·Filed 2013·Granted Sep 25, 2018·0 cites·5 claims
- 0446US10770340B2Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD processHANGZHOU SILAN INTEGRATED CIRCUIT CO LTD·Filed 2017·Granted Sep 8, 2020·0 cites·11 claims
- 0546US9824913B2Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD processHANGZHOU SILAN INTEGRATED CIRCUIT CO LTD·Filed 2013·Granted Nov 21, 2017·0 cites·10 claims
- 0638US11212611B2MEMS microphone and manufacturing method thereofHANGZHOU SILAN INTEGRATED CIRCUIT CO LTD·Filed 2020·Granted Dec 28, 2021·0 cites·49 claims
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