Assignee
HANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD
CN·18 granted patents·21 pending applications·5 citations·filing 2019–2025
Top patents by PatentIndex Score
39 records- 0191US11424344B2Trench MOSFET and method for manufacturing the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2020·Granted Aug 23, 2022·3 cites·19 claims
- 0281US11398561B2Method for manufacturing trench MOSFETHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2020·Granted Jul 26, 2022·2 cites·19 claims
- 0379US2025374571A1Silicon carbide metal-oxide-semiconductor field-effect transistor device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2025·Application pending·0 cites
- 0470US12310042B2Silicon carbide MOSFET device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Granted May 20, 2025·0 cites·5 claims
- 0563US11757035B2LDMOS transistor and method for manufacturing the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·12 claims
- 0662US11894440B2Silicon carbide MOSFET device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·25 claims
- 0762US2025176212A1Trench Gate Semiconductor Device and Method for Manufacturing the SameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2024·Application pending·0 cites
- 0862US2025316973A1Overcurrent protection circuit used with charge pump and the control method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2025·Application pending·0 cites
- 0960US2025284306A1Bias Circuit and the Control Method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2025·Application pending·0 cites
- 1060US2025081519A1Trench Gate Semiconductor DeviceHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2024·Application pending·0 cites
- 1159US12538563B2Trench-type power device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted Jan 27, 2026·0 cites·17 claims
- 1258US12495563B2Manufacturing method of trench-type power deviceHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted Dec 9, 2025·0 cites·9 claims
- 1358US2024355925A1Gate-source structure and manufacturing method thereof, and asymmetric trench mosfet and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 1458US2025048673A1Trench mosfet and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 1558US2025220934A1Trench Capacitor and Method for Manufacturing the SameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2024·Application pending·0 cites
- 1657US2025072047A1Trench MOSFET and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2024·Application pending·0 cites
- 1754US12469706B2Method for manufacturing trench-gate MOSFETHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·4 claims
- 1854US2024321964A1Trench semiconductor power device and layout thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 1953US12382659B2Method for manufacturing trench MOSFETHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·10 claims
- 2051US12581679B2Split-gate power MOS device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted Mar 17, 2026·0 cites·12 claims
- 2151US12538723B2Silicon carbide MOSFET device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted Jan 27, 2026·0 cites·10 claims
- 2251US11355631B2LDMOS transistor and method for manufacturing the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2019·Granted Jun 7, 2022·0 cites·7 claims
- 2350US11670502B2SiC MOSFET and method for manufacturing the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 2450US2023093383A1Super-junction device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 2550US2023077336A1Method for manufacturing conducting path in doped region, trench-type mosfet device and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 2650US2023335621A1Method for manufacturing trench-type mosfetHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 2749US12176432B2Trench-type MOSFET and method for manufacturing the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2021·Granted Dec 24, 2024·0 cites·20 claims
- 2849US2026013209A1Shielded gate trench device and a method for fabricating the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2025·Application pending·0 cites
- 2948US12520541B2Super-junction deviceHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Granted Jan 6, 2026·0 cites·15 claims
- 3048US12279442B2LDMOS transistor and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·13 claims
- 3148US12176406B2Trench MOSFET and method for manufacturing the sameHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2020·Granted Dec 24, 2024·0 cites·7 claims
- 3248US2024079445A1Super-junction mos device with integrated tmbs structure and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 3347US2024105843A1Trench field-effect transistor and method for manufacturing trench fetHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
- 3445US2025254949A1Trench Gate Semiconductor DeviceHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2025·Application pending·0 cites
- 3544US12310053B2Super-junction VDMOS device with low on-resistanceHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Granted May 20, 2025·0 cites·9 claims
- 3644US2023178591A1Super-junction semiconductor device with enlarged process window for desirable breakdown voltageHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 3743US2023207685A1Split-gate mosfet and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 3842US2023207684A1Split-gate mosfet and manufacturing method thereofHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2022·Application pending·0 cites
- 3938US2024178058A1Contact structure of semiconductor device and manufacturing method thereforHANGZHOU SILICON MAGIC SEMICONDUCTOR TECH CO LTD·Filed 2023·Application pending·0 cites
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