Assignee
HASHIMI KAZUO
JP·4 granted patents·5 citations·filing 2009–2012
Top patents by PatentIndex Score
4 records- 0172US8809919B2Semiconductor device with inverted trapezoidal cross sectional profile in surface areas of substrateHASHIMI KAZUO·Filed 2012·Granted Aug 19, 2014·2 cites·4 claims
- 0272US8163572B2Method for evaluating impurity distribution under gate electrode without damaging silicon substrateHASHIMI KAZUO·Filed 2009·Granted Apr 24, 2012·3 cites·8 claims
- 0357US8114764B2Semiconductor device and fabrication method thereofHASHIMI KAZUO·Filed 2009·Granted Feb 14, 2012·0 cites·9 claims
- 0452US8592951B2Semiconductor wafer having W-shaped dummy metal filling section within monitor regionHASHIMI KAZUO·Filed 2012·Granted Nov 26, 2013·0 cites·3 claims
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