Assignee
HEFEI RELIANCE MEMORY LTD
CN·76 granted patents·7 pending applications·120 citations·filing 2014–2025
Top patents by PatentIndex Score
83 records- 0198US11081168B2Mixed digital-analog memory devices and circuits for secure storage and computingHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Aug 3, 2021·8 cites·20 claims
- 0296US11468947B2Techniques for initializing resistive memory devices by applying voltages with different polaritiesHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Oct 11, 2022·4 cites·11 claims
- 0396US11462585B2RRAM process integration scheme and cell structure with reduced masking operationsHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Oct 4, 2022·4 cites·18 claims
- 0495US11653580B2Non-volatile memory structure with positioned dopingHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted May 16, 2023·2 cites·17 claims
- 0595US10037801B22T-1R architecture for resistive RAMHEFEI RELIANCE MEMORY LTD·Filed 2014·Granted Jul 31, 2018·14 cites·15 claims
- 0694US10902915B2Resistance change memory cell circuits and methodsHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jan 26, 2021·3 cites·20 claims
- 0793US10777608B2RRAM process integration scheme and cell structure with reduced masking operationsHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Sep 15, 2020·10 cites·14 claims
- 0893US10199098B22T-1R architecture for resistive RAMHEFEI RELIANCE MEMORY LTD·Filed 2018·Granted Feb 5, 2019·9 cites·7 claims
- 0993US10186553B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jan 22, 2019·6 cites·20 claims
- 1092US10340312B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Jul 2, 2019·6 cites·20 claims
- 1191US10388372B21T-1R architecture for resistive random access memoryHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Aug 20, 2019·7 cites·20 claims
- 1289US11651820B2Fast read speed memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted May 16, 2023·1 cites·18 claims
- 1389US10783964B21T-1R architecture for resistive random access memoryHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Sep 22, 2020·5 cites·20 claims
- 1489US10224480B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 5, 2019·4 cites·18 claims
- 1588US10622062B22T-1R architecture for resistive ramHEFEI RELIANCE MEMORY LTD·Filed 2018·Granted Apr 14, 2020·5 cites·20 claims
- 1687US10388375B2Fast read speed memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2018·Granted Aug 20, 2019·4 cites·15 claims
- 1786US11489116B2Thermal field controlled electrical conductivity change deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 1, 2022·2 cites·10 claims
- 1885US11069391B2Dual-precision analog memory cell and arrayHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jul 20, 2021·3 cites·18 claims
- 1984US11963465B2Non-volatile memory structure with positioned dopingHEFEI RELIANCE MEMORY LTD·Filed 2023·Granted Apr 16, 2024·0 cites·18 claims
- 2084US2024224821A1Non-volatile memory structure with positioned dopingHEFEI RELIANCE MEMORY LTD·Filed 2024·Application pending·0 cites
- 2183US12230309B2Dual-precision analog memory cell and arrayHEFEI RELIANCE MEMORY LTD·Filed 2023·Granted Feb 18, 2025·0 cites·12 claims
- 2283US11018295B2Non-volatile memory structure with positioned dopingHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted May 25, 2021·4 cites·18 claims
- 2383US10943655B2Techniques for initializing resistive memory devices by applying different polarity voltages across resistance change materialHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Mar 9, 2021·4 cites·25 claims
- 2482US2026013407A1Memory device having improved memory cell structures to prevent formation of voids thereinHEFEI RELIANCE MEMORY LTD·Filed 2025·Application pending·0 cites
- 2581US12232335B2RRAM process integration scheme and cell structure with reduced masking operationsHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Feb 18, 2025·0 cites·19 claims
- 2681US10825518B2Fast read speed memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Nov 3, 2020·2 cites·20 claims
- 2780US10998044B2RRAM write using a ramp control circuitHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted May 4, 2021·3 cites·15 claims
- 2879US11887645B2Dual-precision analog memory cell and arrayHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Jan 30, 2024·0 cites·12 claims
- 2979US11765914B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 3079US10699786B2Resistance change memory cell circuits and methodsHEFEI RELIANCE MEMORY LTD·Filed 2019·Granted Jun 30, 2020·2 cites·18 claims
- 3178US2025166686A1Dual-precision analog memory cell and arrayHEFEI RELIANCE MEMORY LTD·Filed 2025·Application pending·0 cites
- 3278US2025194108A1Rram process integration scheme and cell structure with reduced masking operationsHEFEI RELIANCE MEMORY LTD·Filed 2025·Application pending·0 cites
- 3377US12144269B2Thermal field controlled electrical conductivity change deviceHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Nov 12, 2024·0 cites·18 claims
- 3477US11908515B22T-1R architecture for resistive ramHEFEI RELIANCE MEMORY LTD·Filed 2023·Granted Feb 20, 2024·0 cites·19 claims
- 3577US11557264B2Display driver system with embedded non-volatile memoryHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jan 17, 2023·1 cites·14 claims
- 3676US12439609B2Process technique for embedded memoryHEFEI RELIANCE MEMORY LTD·Filed 2024·Granted Oct 7, 2025·0 cites·5 claims
- 3776US12327587B2Method of RRAM write ramping voltage in intervalsHEFEI RELIANCE MEMORY LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 3876US11848050B2Resistance change memory cell circuits and methodsHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Dec 19, 2023·0 cites·20 claims
- 3976US2026013143A1Process technique for embedded memoryHEFEI RELIANCE MEMORY LTD·Filed 2025·Application pending·0 cites
- 4075US11672189B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 4175US11289542B2Multi-layered conductive metal oxide structures and methods for facilitating enhanced performance characteristics of two-terminal memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Mar 29, 2022·0 cites·19 claims
- 4274US11502249B2Memory element with a reactive metal layerHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Nov 15, 2022·0 cites·19 claims
- 4373US12433177B2Memory device having improved memory cell structures to prevent formation of voids thereinHEFEI RELIANCE MEMORY LTD·Filed 2023·Granted Sep 30, 2025·0 cites·20 claims
- 4473US12266300B2Display driver integrated circuit having embedded resistive random access memory and display device having sameHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Apr 1, 2025·1 cites·35 claims
- 4573US10861544B2Adaptive memory cell write conditionsHEFEI RELIANCE MEMORY LTD·Filed 2017·Granted Dec 8, 2020·2 cites·24 claims
- 4672US12027206B2Techniques for initializing resistive memory devices by applying voltages with different polaritiesHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Jul 2, 2024·0 cites·22 claims
- 4772US11967374B2Voltage-mode bit line precharge for random-access memory cellsHEFEI RELIANCE MEMORY LTD·Filed 2022·Granted Apr 23, 2024·0 cites·21 claims
- 4872US11380396B2Resistance change memory cell circuits and methodsHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 5, 2022·0 cites·20 claims
- 4972US11257544B2Fast read speed memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 5072US11063214B2Two-terminal reversibly switchable memory deviceHEFEI RELIANCE MEMORY LTD·Filed 2020·Granted Jul 13, 2021·0 cites·20 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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