Assignee
HIRABAYASHI YASUHIRO
JP·2 granted patents·2 pending applications·5 citations·filing 2011–2014
Top patents by PatentIndex Score
4 records- 0166US9385188B2Semiconductor device with termination region having floating electrodes in an insulating layerHIRABAYASHI YASUHIRO·Filed 2012·Granted Jul 5, 2016·3 cites·2 claims
- 0261US9082842B2Semiconductor deviceHIRABAYASHI YASUHIRO·Filed 2011·Granted Jul 14, 2015·2 cites·2 claims
- 0340US2015206960A1Semiconductor deviceHIRABAYASHI YASUHIRO·Filed 2014·Application pending·0 cites
- 0438US2016005843A1Semiconductor device and manufacturing method thereofHIRABAYASHI YASUHIRO·Filed 2013·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →