Assignee
HOSHI RYOJI
JP·3 granted patents·2 pending applications·8 citations·filing 2005–2012
Top patents by PatentIndex Score
5 records- 0182US9260796B2Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereofHOSHI RYOJI·Filed 2008·Granted Feb 16, 2016·5 cites·9 claims
- 0278US9217208B2Apparatus for producing single crystalHOSHI RYOJI·Filed 2008·Granted Dec 22, 2015·3 cites·14 claims
- 0341US8211228B2Method for producing single crystal and a method for producing annealed waferHOSHI RYOJI·Filed 2005·Granted Jul 3, 2012·0 cites·18 claims
- 0438US2014379276A1Method for calculating nitrogen concentration in silicon single crystal and method for calculating resistivity shift amountHOSHI RYOJI·Filed 2012·Application pending·0 cites
- 0535US2013323153A1Silicon single crystal waferHOSHI RYOJI·Filed 2012·Application pending·0 cites
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