Assignee
HU GUOHAN
US·6 granted patents·2 pending applications·42 citations·filing 2009–2012
Top patents by PatentIndex Score
8 records- 0192US8492859B2Magnetic tunnel junction with spacer layer for spin torque switched MRAMHU GUOHAN·Filed 2011·Granted Jul 23, 2013·17 cites·15 claims
- 0288US8866207B2Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memoryHU GUOHAN·Filed 2012·Granted Oct 21, 2014·10 cites·25 claims
- 0387US8283741B2Optimized free layer for spin torque magnetic random access memoryHU GUOHAN·Filed 2010·Granted Oct 9, 2012·7 cites·20 claims
- 0470US8767446B2Multi-bit spin-momentum-transfer magnetoresistence random access memory with single magnetic-tunnel-junction stackHU GUOHAN·Filed 2011·Granted Jul 1, 2014·4 cites·15 claims
- 0562US8284594B2Magnetic devices and structuresHU GUOHAN·Filed 2009·Granted Oct 9, 2012·4 cites·14 claims
- 0651US2012241878A1Magnetic tunnel junction with iron dusting layer between free layer and tunnel barrierHU GUOHAN·Filed 2011·Application pending·0 cites
- 0743US8717808B2Magnetic devices and structuresHU GUOHAN·Filed 2012·Granted May 6, 2014·0 cites·9 claims
- 0840US2012267733A1Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memoryHU GUOHAN·Filed 2011·Application pending·0 cites
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