Assignee
HUANG CHIH-SHU
TW·8 granted patents·4 pending applications·13 citations·filing 2017–2024
Top patents by PatentIndex Score
12 records- 0194US11195943B2Epitaxial structure of Ga-face group III nitride, active device, and gate protection device thereofHUANG CHIH SHU·Filed 2020·Granted Dec 7, 2021·3 cites·18 claims
- 0284US10672763B2Epitaxial structure of Ga-face group III nitride, active device, and method for fabricating the sameHUANG CHIH SHU·Filed 2017·Granted Jun 2, 2020·4 cites·12 claims
- 0383US10475913B2Epitaxial structure of N-face AlGaN/GaN, active device, and method for fabricating the same with integration and polarity inversionHUANG CHIH SHU·Filed 2018·Granted Nov 12, 2019·3 cites·23 claims
- 0479US10529821B2Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversionHUANG CHIH SHU·Filed 2018·Granted Jan 7, 2020·2 cites·8 claims
- 0575US10886381B2Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversionHUANG CHIH SHU·Filed 2019·Granted Jan 5, 2021·1 cites·7 claims
- 0660US2025031402A1HYBRID TYPE AlGaN/GaN HEMT DEVICEHUANG CHIH SHU·Filed 2024·Application pending·0 cites
- 0759US11469308B2Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversionHUANG CHIH SHU·Filed 2020·Granted Oct 11, 2022·0 cites·3 claims
- 0852US11605731B2Epitaxial structure of N-face group III nitride, active device, and gate protection device thereofHUANG CHIH SHU·Filed 2020·Granted Mar 14, 2023·0 cites·22 claims
- 0951US10833163B2Epitaxial structure of N-face group III nitride, active device, and method for fabricating the same with integration and polarity inversionHUANG CHIH SHU·Filed 2018·Granted Nov 10, 2020·0 cites·2 claims
- 1049US2022093583A1Epitaxial structure of ga-face group iii nitride, active device, and gate protection device thereofHUANG CHIH SHU·Filed 2021·Application pending·0 cites
- 1149US2022093780A1Epitaxial structure of ga-face group iii nitride, active device, and gate protection device thereofHUANG CHIH SHU·Filed 2021·Application pending·0 cites
- 1245US2020251563A1Epitaxial structure of ga-face group iii nitride, active device, and method for fabricating the sameHUANG CHIH-SHU·Filed 2020·Application pending·0 cites
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →