Assignee
HUANG RU
CN·26 granted patents·9 pending applications·77 citations·filing 2010–2012
Top patents by PatentIndex Score
35 records- 0190US9018968B2Method for testing density and location of gate dielectric layer trap of semiconductor deviceHUANG RU·Filed 2012·Granted Apr 28, 2015·17 cites·6 claims
- 0284US8564031B2High voltage-resistant lateral double-diffused transistor based on nanowire deviceHUANG RU·Filed 2011·Granted Oct 22, 2013·9 cites·7 claims
- 0384US8513067B2Fabrication method for surrounding gate silicon nanowire transistor with air as spacersHUANG RU·Filed 2011·Granted Aug 20, 2013·10 cites·9 claims
- 0477US8673722B2Strained channel field effect transistor and the method for fabricating the sameHUANG RU·Filed 2011·Granted Mar 18, 2014·6 cites·5 claims
- 0576US8865543B2Ge-based NMOS device and method for fabricating the sameHUANG RU·Filed 2012·Granted Oct 21, 2014·4 cites·9 claims
- 0673US8598636B2Heat dissipation structure of SOI field effect transistorHUANG RU·Filed 2011·Granted Dec 3, 2013·5 cites·10 claims
- 0771US8288238B2Method for fabricating a tunneling field-effect transistorHUANG RU·Filed 2010·Granted Oct 16, 2012·5 cites·10 claims
- 0869US8507959B2Combined-source MOS transistor with comb-shaped gate, and method for manufacturing the sameHUANG RU·Filed 2011·Granted Aug 13, 2013·3 cites·10 claims
- 0968US8563370B2Method for fabricating surrounding-gate silicon nanowire transistor with air sidewallsHUANG RU·Filed 2011·Granted Oct 22, 2013·3 cites·9 claims
- 1067US8921174B2Method for fabricating complementary tunneling field effect transistor based on standard CMOS IC processHUANG RU·Filed 2012·Granted Dec 30, 2014·3 cites·6 claims
- 1165US9086448B2Method for predicting reliable lifetime of SOI mosfet deviceHUANG RU·Filed 2011·Granted Jul 21, 2015·2 cites·5 claims
- 1263US8710557B2MOS transistor having combined-source structure with low power consumption and method for fabricating the sameHUANG RU·Filed 2011·Granted Apr 29, 2014·2 cites·6 claims
- 1362US8901644B2Field effect transistor with a vertical channel and fabrication method thereofHUANG RU·Filed 2011·Granted Dec 2, 2014·2 cites·7 claims
- 1462US8632691B2Interface treatment method for germanium-based deviceHUANG RU·Filed 2012·Granted Jan 21, 2014·1 cites·5 claims
- 1559US8866507B2Method for testing trap density of gate dielectric layer in semiconductor device having no substrate contactHUANG RU·Filed 2011·Granted Oct 21, 2014·1 cites·7 claims
- 1658US8450155B2Method for introducing channel stress and field effect transistor fabricated by the sameHUANG RU·Filed 2011·Granted May 28, 2013·1 cites·4 claims
- 1756US9034702B2Method for fabricating silicon nanowire field effect transistor based on wet etchingHUANG RU·Filed 2011·Granted May 19, 2015·1 cites·8 claims
- 1856US8592276B2Fabrication method of vertical silicon nanowire field effect transistorHUANG RU·Filed 2011·Granted Nov 26, 2013·1 cites·9 claims
- 1951US8633465B2Multilevel resistive memory having large storage capacityHUANG RU·Filed 2012·Granted Jan 21, 2014·1 cites·20 claims
- 2041US8476672B2Electrostatic discharge protection device and method for fabricating the sameHUANG RU·Filed 2011·Granted Jul 2, 2013·0 cites·7 claims
- 2141US2014145139A1Transparent flexible resistive memory and fabrication method thereofHUANG RU·Filed 2012·Application pending·0 cites
- 2240US8895980B2Tunneling current amplification transistorHUANG RU·Filed 2011·Granted Nov 25, 2014·0 cites·4 claims
- 2340US8722312B2Method for fabricating semiconductor nano circular ringHUANG RU·Filed 2011·Granted May 13, 2014·0 cites·7 claims
- 2438US9099500B2Programmable array of silicon nanowire field effect transistor and method for fabricating the sameHUANG RU·Filed 2011·Granted Aug 4, 2015·0 cites·20 claims
- 2538US8652929B2CMOS device for reducing charge sharing effect and fabrication method thereofHUANG RU·Filed 2012·Granted Feb 18, 2014·0 cites·6 claims
- 2637US8526242B2Flash memory and fabrication method and operation method for the sameHUANG RU·Filed 2011·Granted Sep 3, 2013·0 cites·3 claims
- 2737US2013069126A1Germanium-based nmos device and method for fabricating the sameHUANG RU·Filed 2012·Application pending·0 cites
- 2836US8877594B2CMOS device for reducing radiation-induced charge collection and method for fabricating the sameHUANG RU·Filed 2011·Granted Nov 4, 2014·0 cites·4 claims
- 2936US2012289004A1Fabrication method of germanium-based n-type schottky field effect transistorHUANG RU·Filed 2011·Application pending·0 cites
- 3036US2013130503A1Method for fabricating ultra-fine nanowireHUANG RU·Filed 2012·Application pending·0 cites
- 3135US2012223361A1Low-power consumption tunneling field-effect transistor with finger-shaped gate structureHUANG RU·Filed 2011·Application pending·0 cites
- 3235US2012181584A1Resistive Field Effect Transistor Having an Ultra-Steep Subthreshold Slope and Method for Fabricating the SameHUANG RU·Filed 2011·Application pending·0 cites
- 3334US2012168770A1Heat dissipation structure of chipHUANG RU·Filed 2011·Application pending·0 cites
- 3434US2012238097A1Method for fabricating fine lineHUANG RU·Filed 2011·Application pending·0 cites
- 3532US2013217199A1Method for fabricating resistive memory deviceHUANG RU·Filed 2012·Application pending·0 cites
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