Assignee
HUANG YU-LIEN
TW·8 granted patents·74 citations·filing 2010–2012
Top patents by PatentIndex Score
8 records- 0194US8431453B2Plasma doping to reduce dielectric loss during removal of dummy layers in a gate structureHUANG YU-LIEN·Filed 2011·Granted Apr 30, 2013·23 cites·20 claims
- 0294US8278196B2High surface dopant concentration semiconductor device and method of fabricatingHUANG YU-LIEN·Filed 2010·Granted Oct 2, 2012·25 cites·14 claims
- 0391US8828813B2Replacement channelsHUANG YU-LIEN·Filed 2012·Granted Sep 9, 2014·12 cites·22 claims
- 0484US8592915B2Doped oxide for shallow trench isolation (STI)HUANG YU-LIEN·Filed 2011·Granted Nov 26, 2013·5 cites·18 claims
- 0582US8461015B2STI structure and method of forming bottom void in sameHUANG YU-LIEN·Filed 2010·Granted Jun 11, 2013·7 cites·20 claims
- 0667US8877602B2Mechanisms of doping oxide for forming shallow trench isolationHUANG YU-LIEN·Filed 2011·Granted Nov 4, 2014·2 cites·20 claims
- 0753US8912608B2Semiconductor device and fabrication method thereofHUANG YU-LIEN·Filed 2012·Granted Dec 16, 2014·0 cites·20 claims
- 0848US9881840B2Method of fabricating gate electrode using a treated hard maskHUANG YU-LIEN·Filed 2011·Granted Jan 30, 2018·0 cites·20 claims
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