Assignee

HUMPHREYS COLIN

GB·1 granted patent·7 citations·filing 2011–2011

Technology mixB82Y1 H01L1 H10F1 H10H1 H10P1 Y02E1

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0174US9142723B2Semiconductor wafer comprising gallium nitride layer having one or more silicon nitride interlayer thereinHUMPHREYS COLIN·Filed 2011·Granted Sep 22, 2015·7 cites·18 claims

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