Assignee
HUNAN SANAN SEMICONDUCTOR CO LTD
CN·5 granted patents·10 pending applications·0 citations·filing 2020–2025
Top patents by PatentIndex Score
15 records- 0164US2025393289A1Epitaxial structure of gallium nitride transistor and preparation method thereof, and gallium nitride transistorHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2025·Application pending·0 cites
- 0258US11499246B2Crystal raw material loading device comprising a plurality of receptacles arranged relative to a seed crystal bearing device and semiconductor crystal growth device comprising the sameHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Granted Nov 15, 2022·0 cites·14 claims
- 0356US2024203802A1Package housingHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 0455US2024258385A1Gallium nitride bidirectional switch deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 0553US2024234565A1Hemt device and semiconductor deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2024·Application pending·0 cites
- 0653US2023299128A1Lateral field-effect transistor and preparing methodHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 0748US2021305080A1Wafer surface processing deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Application pending·0 cites
- 0848US2021301418A1Sic crystal growth device and methodHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Application pending·0 cites
- 0948US2023006049A1Silicon carbide power device with an enhanced junction field effect transistor regionHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Application pending·0 cites
- 1048US2024162327A1Semiconductor structure and method for manufacturing semiconductor structureHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2023·Application pending·0 cites
- 1148US2021299822A1Crystal centering and clamping deviceHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Application pending·0 cites
- 1247US11967651B2Silicon carbide power diode device and fabrication method thereofHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2022·Granted Apr 23, 2024·0 cites·19 claims
- 1344US12295162B2Epitaxial structure for high-electron-mobility transistor and method for manufacturing the sameHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2022·Granted May 6, 2025·0 cites·20 claims
- 1441US11437525B2Silicon carbide power diode device and fabrication method thereofHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2020·Granted Sep 6, 2022·0 cites·18 claims
- 1539US12046486B2Etching tool for demountably etching multiple pieces of silicon carbideHUNAN SANAN SEMICONDUCTOR CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·16 claims
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