Assignee
HWANG HYUNSANG
KR·2 granted patents·7 citations·filing 2013–2013
Top patents by PatentIndex Score
2 records- 0184US9269901B2Resistance change memory device having threshold switching and memory switching characteristics, method of fabricating the same, and resistance change memory device including the sameHWANG HYUNSANG·Filed 2013·Granted Feb 23, 2016·7 cites·20 claims
- 0233US9324944B2Selection device and nonvolatile memory cell including the same and method of fabricating the sameHWANG HYUNSANG·Filed 2013·Granted Apr 26, 2016·0 cites·10 claims
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