Assignee
INT RECTIFIER CORP
US·1,069 granted patents·83 pending applications·28,580 citations·filing 1973–2015
Top patents by PatentIndex Score
1,152 records- 0199US7583136B2Active filter for reduction of common mode currentINT RECTIFIER CORP·Filed 2008·Granted Sep 1, 2009·68 cites·4 claims
- 0299US4376286AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1981·Granted Mar 8, 1983·154 cites·26 claims
- 0398US9064775B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2014·Granted Jun 23, 2015·29 cites·20 claims
- 0498US8604611B2Semiconductor device assembly utilizing a DBC substrateINT RECTIFIER CORP·Filed 2013·Granted Dec 10, 2013·32 cites·20 claims
- 0598US8344712B2Modification of activation order in a multi-phase power delivery systemINT RECTIFIER CORP·Filed 2011·Granted Jan 1, 2013·33 cites·22 claims
- 0698US8343856B2Method for forming gallium nitride devices with conductive regionsINT RECTIFIER CORP·Filed 2011·Granted Jan 1, 2013·85 cites·20 claims
- 0798US8018056B2Package for high power density devicesINT RECTIFIER CORP·Filed 2006·Granted Sep 13, 2011·49 cites·40 claims
- 0898US7976182B2LED lamp assembly with temperature control and method of making the sameINT RECTIFIER CORP·Filed 2008·Granted Jul 12, 2011·78 cites·18 claims
- 0998US7915645B2Monolithic vertically integrated composite group III-V and group IV semiconductor device and method for fabricating sameINT RECTIFIER CORP·Filed 2009·Granted Mar 29, 2011·70 cites·11 claims
- 1098US7863877B2Monolithically integrated III-nitride power converterINT RECTIFIER CORP·Filed 2007·Granted Jan 4, 2011·58 cites·29 claims
- 1198US7382001B2Enhancement mode III-nitride FETINT RECTIFIER CORP·Filed 2005·Granted Jun 3, 2008·84 cites·14 claims
- 1298US6747300B2H-bridge drive utilizing a pair of high and low side MOSFETs in a common insulation housingINT RECTIFIER CORP·Filed 2002·Granted Jun 8, 2004·1.1k cites·18 claims
- 1398US6624522B2Chip scale surface mounted device and process of manufactureINT RECTIFIER CORP·Filed 2001·Granted Sep 23, 2003·214 cites·11 claims
- 1498US6608350B2High voltage vertical conduction superjunction semiconductor deviceINT RECTIFIER CORP·Filed 2000·Granted Aug 19, 2003·213 cites·22 claims
- 1598US4974059ASemiconductor high-power mosfet deviceINT RECTIFIER CORP·Filed 1989·Granted Nov 27, 1990·236 cites·9 claims
- 1698US4593302AProcess for manufacture of high power MOSFET with laterally distributed high carrier density beneath the gate oxideINT RECTIFIER CORP·Filed 1980·Granted Jun 3, 1986·173 cites·14 claims
- 1797US8592862B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Nov 26, 2013·18 cites·20 claims
- 1897US8344417B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Jan 1, 2013·16 cites·20 claims
- 1997US7465997B2III-nitride bidirectional switchINT RECTIFIER CORP·Filed 2005·Granted Dec 16, 2008·63 cites·13 claims
- 2097US7462908B2Dynamic deep depletion field effect transistorINT RECTIFIER CORP·Filed 2005·Granted Dec 9, 2008·113 cites·8 claims
- 2197US7148664B2High frequency partial boost power factor correction control circuit and methodINT RECTIFIER CORP·Filed 2005·Granted Dec 12, 2006·99 cites·13 claims
- 2297US7045884B2Semiconductor device packageINT RECTIFIER CORP·Filed 2003·Granted May 16, 2006·123 cites·20 claims
- 2397US6794929B2Active filter for reduction of common mode currentINT RECTIFIER CORP·Filed 2003·Granted Sep 21, 2004·65 cites·19 claims
- 2497US5814884ACommonly housed diverse semiconductor dieINT RECTIFIER CORP·Filed 1997·Granted Sep 29, 1998·307 cites·40 claims
- 2597US4705759AHigh power MOSFET with low on-resistance and high breakdown voltageINT RECTIFIER CORP·Filed 1983·Granted Nov 10, 1987·98 cites·7 claims
- 2696US9190383B2Semiconductor package including a power stage and integrated output inductorINT RECTIFIER CORP·Filed 2015·Granted Nov 17, 2015·25 cites·20 claims
- 2796US8937335B2Gallium nitride devices with aluminum nitride intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 20, 2015·12 cites·20 claims
- 2896US8928034B2Gallium nitride devices with aluminum nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·11 cites·20 claims
- 2996US8368210B2Wafer scale package for high power devicesINT RECTIFIER CORP·Filed 2011·Granted Feb 5, 2013·16 cites·11 claims
- 3096US8022726B2Multi-level signalingINT RECTIFIER CORP·Filed 2010·Granted Sep 20, 2011·22 cites·15 claims
- 3196US8017978B2Hybrid semiconductor deviceINT RECTIFIER CORP·Filed 2006·Granted Sep 13, 2011·40 cites·14 claims
- 3296US7550781B2Integrated III-nitride power devicesINT RECTIFIER CORP·Filed 2005·Granted Jun 23, 2009·46 cites·21 claims
- 3396US7414507B2Planar transformer arrangementINT RECTIFIER CORP·Filed 2006·Granted Aug 19, 2008·42 cites·4 claims
- 3496US7359224B2Digital implementation of power factor correctionINT RECTIFIER CORP·Filed 2006·Granted Apr 15, 2008·70 cites·20 claims
- 3596US7102327B2Motor current reconstruction via DC bus current measurementINT RECTIFIER CORP·Filed 2005·Granted Sep 5, 2006·40 cites·13 claims
- 3696US6677669B2Semiconductor package including two semiconductor die disposed within a common clipINT RECTIFIER CORP·Filed 2002·Granted Jan 13, 2004·112 cites·24 claims
- 3796US6580627B2Voltage sensing with high and low side signals for deadtime compensation and shutdown for short circuit protectionINT RECTIFIER CORP·Filed 2001·Granted Jun 17, 2003·82 cites·20 claims
- 3896US6580123B2Low voltage power MOSFET device and process for its manufactureINT RECTIFIER CORP·Filed 2001·Granted Jun 17, 2003·123 cites·22 claims
- 3996US6482681B1Hydrogen implant for buffer zone of punch-through non epi IGBTINT RECTIFIER CORP·Filed 2000·Granted Nov 19, 2002·133 cites·25 claims
- 4096US6452230B1High voltage mosgated device with trenches to reduce on-resistanceINT RECTIFIER CORP·Filed 1999·Granted Sep 17, 2002·211 cites·7 claims
- 4196US6272015B1Power semiconductor module with insulation shell support for plural separate substratesINT RECTIFIER CORP·Filed 2000·Granted Aug 7, 2001·156 cites·13 claims
- 4296US6259614B1Power factor correction control circuitINT RECTIFIER CORP·Filed 2000·Granted Jul 10, 2001·191 cites·12 claims
- 4396US6194741B1MOSgated trench type power semiconductor with silicon carbide substrate and increased gate breakdown voltage and reduced on-resistanceINT RECTIFIER CORP·Filed 1998·Granted Feb 27, 2001·204 cites·5 claims
- 4496US6040626ASemiconductor packageINT RECTIFIER CORP·Filed 1999·Granted Mar 21, 2000·375 cites·28 claims
- 4596US5886397ACrushable bead on lead finger side surface to improve moldabilityINT RECTIFIER CORP·Filed 1997·Granted Mar 23, 1999·198 cites·7 claims
- 4696US5672992ACharge pump circuit for high side switchINT RECTIFIER CORP·Filed 1995·Granted Sep 30, 1997·118 cites·32 claims
- 4796US4399449AComposite metal and polysilicon field plate structure for high voltage semiconductor devicesINT RECTIFIER CORP·Filed 1980·Granted Aug 16, 1983·95 cites·16 claims
- 4895US9577522B2Pre-filtering in a power supply control circuitINT RECTIFIER CORP·Filed 2015·Granted Feb 21, 2017·15 cites·23 claims
- 4995US9406674B2Integrated III-nitride D-mode HFET with cascoded pair half bridgeINT RECTIFIER CORP·Filed 2014·Granted Aug 2, 2016·20 cites·5 claims
- 5095US8928035B2Gallium nitride devices with gallium nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·9 cites·20 claims
Showing the top 50 of 1,152 patent records by PatentIndex Score.
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