Assignee
JIANG FENGYI
CN·3 granted patents·1 pending application·0 citations·filing 2007–2012
Top patents by PatentIndex Score
4 records- 0146US8461029B2Method for fabricating InGaN-based multi-quantum well layersJIANG FENGYI·Filed 2012·Granted Jun 11, 2013·0 cites·11 claims
- 0240US8431936B2Method for fabricating a p-type semiconductor structureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·12 claims
- 0340US8431475B2Method for fabricating a low-resistivity ohmic contact to a p-type III-V nitride semiconductor material at low temperatureJIANG FENGYI·Filed 2007·Granted Apr 30, 2013·0 cites·18 claims
- 0440US2011298005A1Method for fabricating an n-type semiconductor material using silane as a precursorJIANG FENGYI·Filed 2007·Application pending·0 cites
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