Assignee
JO SUNG HYUN
US·12 granted patents·1 pending application·203 citations·filing 2010–2012
Top patents by PatentIndex Score
13 records- 0198US8467227B1Hetero resistive switching material layer in RRAM device and methodJO SUNG HYUN·Filed 2011·Granted Jun 18, 2013·74 cites·21 claims
- 0297US8441835B2Interface control for improved switching in RRAMJO SUNG HYUN·Filed 2010·Granted May 14, 2013·52 cites·19 claims
- 0393US8569172B1Noble metal/non-noble metal electrode for RRAM applicationsJO SUNG HYUN·Filed 2012·Granted Oct 29, 2013·11 cites·21 claims
- 0492US8723154B2Integration of an amorphous silicon resistive switching deviceJO SUNG HYUN·Filed 2010·Granted May 13, 2014·12 cites·43 claims
- 0592US8391049B2Resistor structure for a non-volatile memory device and methodJO SUNG HYUN·Filed 2010·Granted Mar 5, 2013·14 cites·27 claims
- 0690US8971088B1Multi-level cell operation using zinc oxide switching material in non-volatile memory deviceJO SUNG HYUN·Filed 2012·Granted Mar 3, 2015·14 cites·19 claims
- 0784US8946046B1Guided path for forming a conductive filament in RRAMJO SUNG HYUN·Filed 2012·Granted Feb 3, 2015·5 cites·20 claims
- 0883US8884261B2Device switching using layered device structureJO SUNG HYUN·Filed 2010·Granted Nov 11, 2014·7 cites·22 claims
- 0982US9012307B2Two terminal resistive switching device structure and method of fabricatingJO SUNG HYUN·Filed 2010·Granted Apr 21, 2015·4 cites·23 claims
- 1082US8558212B2Conductive path in switching material in a resistive random access memory device and controlJO SUNG HYUN·Filed 2010·Granted Oct 15, 2013·5 cites·20 claims
- 1171US9058865B1Multi-level cell operation in silver/amorphous silicon RRAMJO SUNG HYUN·Filed 2012·Granted Jun 16, 2015·4 cites·20 claims
- 1262US8946669B1Resistive memory device and fabrication methodsJO SUNG HYUN·Filed 2012·Granted Feb 3, 2015·1 cites·30 claims
- 1343US2012007035A1Intrinsic Programming Current Control for a RRAMJO SUNG HYUN·Filed 2010·Application pending·0 cites
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