Assignee
JOHNSON BAYARD K
US·2 granted patents·0 citations·filing 2012–2012
Top patents by PatentIndex Score
2 records- 0145US10544517B2Growth of a uniformly doped silicon ingot by doping only the initial chargeJOHNSON BAYARD K·Filed 2012·Granted Jan 28, 2020·0 cites·3 claims
- 0245US10202705B2Silicon ingot having uniform multiple dopants and method and apparatus for producing sameJOHNSON BAYARD K·Filed 2012·Granted Feb 12, 2019·0 cites·10 claims
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