Assignee
JUNG EUN-JI
KR·2 granted patents·17 citations·filing 2009–2010
Top patents by PatentIndex Score
2 records- 0187US8173506B2Method of forming buried gate electrode utilizing formation of conformal gate oxide and gate electrode layersJUNG EUN-JI·Filed 2009·Granted May 8, 2012·17 cites·17 claims
- 0242US8119526B2Method of forming a metal layer and a method of fabricating a semiconductor deviceJUNG EUN-JI·Filed 2010·Granted Feb 21, 2012·0 cites·20 claims
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