Assignee
KAJIYAMA TAKESHI
JP·11 granted patents·3 pending applications·69 citations·filing 2007–2013
Top patents by PatentIndex Score
14 records- 0194US9000545B2Magnetic random access memoryKAJIYAMA TAKESHI·Filed 2011·Granted Apr 7, 2015·12 cites·18 claims
- 0292US8503216B2Resistance change type memoryKAJIYAMA TAKESHI·Filed 2010·Granted Aug 6, 2013·15 cites·20 claims
- 0390US8203193B2Magnetic random access memory and manufacturing method of the sameKAJIYAMA TAKESHI·Filed 2011·Granted Jun 19, 2012·8 cites·2 claims
- 0489US8941197B2Magnetic random access memoryKAJIYAMA TAKESHI·Filed 2012·Granted Jan 27, 2015·7 cites·6 claims
- 0587US8587042B2Magnetoresistive random access memory deviceKAJIYAMA TAKESHI·Filed 2010·Granted Nov 19, 2013·9 cites·19 claims
- 0680US8492830B2Multiple channel fin-FET and its manufacturing methodKAJIYAMA TAKESHI·Filed 2011·Granted Jul 23, 2013·5 cites·7 claims
- 0772US8208289B2Magnetoresistive effect elementKAJIYAMA TAKESHI·Filed 2009·Granted Jun 26, 2012·5 cites·8 claims
- 0869US8081505B2Magnetoresistive element and method of manufacturing the sameKAJIYAMA TAKESHI·Filed 2009·Granted Dec 20, 2011·6 cites·5 claims
- 0958US8058080B2Method of manufacturing a magnetic random access memory, method of manufacturing an embedded memory, and templateKAJIYAMA TAKESHI·Filed 2010·Granted Nov 15, 2011·2 cites·13 claims
- 1054US2008135958A1Magnetic random access memory and manufacturing method of the sameKAJIYAMA TAKESHI·Filed 2007·Application pending·0 cites
- 1153US2008205126A1Magnetic random access memoryKAJIYAMA TAKESHI·Filed 2008·Application pending·0 cites
- 1244US9130034B2Semiconductor device and method of manufacturing the sameKAJIYAMA TAKESHI·Filed 2013·Granted Sep 8, 2015·0 cites·20 claims
- 1344US2008185670A1Magnetic random access memory and method of manufacturing the sameKAJIYAMA TAKESHI·Filed 2007·Application pending·0 cites
- 1437US8238144B2Magnetic memoryKAJIYAMA TAKESHI·Filed 2010·Granted Aug 7, 2012·0 cites·18 claims
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →