Assignee
KANZAWA YOSHIHIKO
JP·7 granted patents·1 pending application·44 citations·filing 2003–2012
Top patents by PatentIndex Score
8 records- 0192US8445319B2Nonvolatile memory element, manufacturing method thereof, and nonvolatile semiconductor apparatus using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted May 21, 2013·15 cites·4 claims
- 0286US8179713B2Nonvolatile memory element, nonvolatile memory device, and nonvolatile semiconductor deviceKANZAWA YOSHIHIKO·Filed 2009·Granted May 15, 2012·17 cites·44 claims
- 0377US8338816B2Nonvolatile memory element, and nonvolatile semiconductor device using the nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2008·Granted Dec 25, 2012·5 cites·33 claims
- 0470US9142292B2Method for reading data from nonvolatile storage element, and nonvolatile storage deviceKANZAWA YOSHIHIKO·Filed 2012·Granted Sep 22, 2015·2 cites·16 claims
- 0569US8619460B2Nonvolatile memory device and method for programming nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2011·Granted Dec 31, 2013·4 cites·19 claims
- 0660US8445885B2Nonvolatile memory element having a thin platinum containing electrodeKANZAWA YOSHIHIKO·Filed 2009·Granted May 21, 2013·1 cites·5 claims
- 0738US2006225642A1Method of forming semiconductor crystalKANZAWA YOSHIHIKO·Filed 2003·Application pending·0 cites
- 0833US8391051B2Method of programming nonvolatile memory elementKANZAWA YOSHIHIKO·Filed 2010·Granted Mar 5, 2013·0 cites·16 claims
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