Assignee
KOMATSU ELECTRONIC METAL CO LT
JP·4 granted patents·80 citations·filing 1996–1998
Top patents by PatentIndex Score
4 records- 0165US5866468AMethod for fabricating an SOI substrateKOMATSU ELECTRONIC METAL CO LT·Filed 1996·Granted Feb 2, 1999·34 cites·6 claims
- 0262US5963821AMethod of making semiconductor wafersKOMATSU ELECTRONIC METAL CO LT·Filed 1997·Granted Oct 5, 1999·28 cites·6 claims
- 0349US5868836ASemiconductor single-crystal lift deviceKOMATSU ELECTRONIC METAL CO LT·Filed 1997·Granted Feb 9, 1999·14 cites·9 claims
- 0439US6056931ASilicon wafer for hydrogen heat treatment and method for manufacturing the sameKOMATSU ELECTRONIC METAL CO LT·Filed 1998·Granted May 2, 2000·4 cites·3 claims
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