Assignee

KOREA ELECTRONICS & COMMUNICAT

KR·1 granted patent·30 citations·filing 1989–1989

Technology mixH10B1 H10D1 H10P1 Y10S1

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0153US4977098AMethod of forming a self-aligned bipolar transistor using amorphous siliconKOREA ELECTRONICS & COMMUNICAT·Filed 1989·Granted Dec 11, 1990·30 cites·6 claims

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