Assignee
KOUKITU AKINORI
JP·6 granted patents·1 pending application·18 citations·filing 2008–2012
Top patents by PatentIndex Score
7 records- 0183US8822263B2Epitaxial growth method of a zinc oxide based semiconductor layer, epitaxial crystal structure, epitaxial crystal growth apparatus, and semiconductor deviceKOUKITU AKINORI·Filed 2009·Granted Sep 2, 2014·9 cites·3 claims
- 0279US9840790B2Highly transparent aluminum nitride single crystalline layers and devices made therefromKOUKITU AKINORI·Filed 2012·Granted Dec 12, 2017·1 cites·9 claims
- 0374US8926752B2Method of producing a group III nitride crystalKOUKITU AKINORI·Filed 2008·Granted Jan 6, 2015·2 cites·1 claims
- 0472US8129208B2n-Type conductive aluminum nitride semiconductor crystal and manufacturing method thereofKOUKITU AKINORI·Filed 2008·Granted Mar 6, 2012·4 cites·5 claims
- 0569US9281180B2Method for producing gallium trichloride gas and method for producing nitride semiconductor crystalKOUKITU AKINORI·Filed 2011·Granted Mar 8, 2016·2 cites·12 claims
- 0646US2011094438A1Laminated body and the method for production thereofKOUKITU AKINORI·Filed 2009·Application pending·0 cites
- 0742US9691942B2Single-cystalline aluminum nitride substrate and a manufacturing method thereofKOUKITU AKINORI·Filed 2011·Granted Jun 27, 2017·0 cites·16 claims
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