Assignee

KTI SEMICONDUCTOR LTD

JP·1 granted patent·9 citations·filing 1997–1997

Technology mixH01J1 H10P1

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0146US5864143AHigh current ion implanter and method of ion implant by the implanterKTI SEMICONDUCTOR LTD·Filed 1997·Granted Jan 26, 1999·9 cites·4 claims

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