Assignee
KURZ ANDREAS
DE·13 granted patents·3 pending applications·64 citations·filing 2009–2014
Top patents by PatentIndex Score
16 records- 0181US8564089B2Electronic fuse structure formed using a metal gate electrode material stack configurationKURZ ANDREAS·Filed 2010·Granted Oct 22, 2013·6 cites·17 claims
- 0280USD757796SPortion of a monitor with an iconKURZ ANDREAS·Filed 2014·Granted May 31, 2016·27 cites·1 claims
- 0379US8507326B2BEOL anti-fuse structures for gate last semiconductor devicesKURZ ANDREAS·Filed 2011·Granted Aug 13, 2013·5 cites·9 claims
- 0476US8617940B2SOI device with a buried insulating material having increased etch resistivityKURZ ANDREAS·Filed 2009·Granted Dec 31, 2013·5 cites·20 claims
- 0573US8962420B2Semiconductor device comprising a buried poly resistorKURZ ANDREAS·Filed 2009·Granted Feb 24, 2015·5 cites·16 claims
- 0667US8524567B2Semiconductor fuse with enhanced post-programming resistanceKURZ ANDREAS·Filed 2011·Granted Sep 3, 2013·1 cites·9 claims
- 0767US8486768B2Semiconductor device comprising high-k metal gate electrode structures and precision eFuses formed in the active semiconductor materialKURZ ANDREAS·Filed 2011·Granted Jul 16, 2013·2 cites·20 claims
- 0865US9287211B2Semiconductor device comprising metal-based eFuses of enhanced programming efficiency by enhancing heat generationKURZ ANDREAS·Filed 2011·Granted Mar 15, 2016·2 cites·16 claims
- 0960US8609485B2Methods of forming efuse devicesKURZ ANDREAS·Filed 2010·Granted Dec 17, 2013·1 cites·10 claims
- 1045USD757797SPortion of a monitor with an iconKURZ ANDREAS·Filed 2014·Granted May 31, 2016·5 cites·1 claims
- 1145US8193066B2Semiconductor device comprising a silicon/germanium resistorKURZ ANDREAS·Filed 2009·Granted Jun 5, 2012·0 cites·4 claims
- 1241USD762733SPortion of a monitor with a transitional iconKURZ ANDREAS·Filed 2014·Granted Aug 2, 2016·5 cites·1 claims
- 1338US2011156857A1SILICON-BASED SEMICONDUCTOR DEVICE COMPRISING eFUSES FORMED BY AN EMBEDDED SEMICONDUCTOR ALLOYKURZ ANDREAS·Filed 2010·Application pending·0 cites
- 1436US2012164799A1Method of Forming a Semiconductor Device Comprising eFuses of Increased Programming WindowKURZ ANDREAS·Filed 2011·Application pending·0 cites
- 1536US2011186916A1Semiconductor resistors formed in a semiconductor device comprising metal gates by reducing conductivity of a metal-containing cap materialKURZ ANDREAS·Filed 2010·Application pending·0 cites
- 1630US9076818B2Semiconductor device fabrication methodsKURZ ANDREAS·Filed 2012·Granted Jul 7, 2015·0 cites·20 claims
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