Assignee
KYMA TECHNOLOGIES INC
US·9 granted patents·282 citations·filing 2001–2015
Top patents by PatentIndex Score
9 records- 0196US6692568B2Method and apparatus for producing MIIIN columns and MIIIN materials grown thereonKYMA TECHNOLOGIES INC·Filed 2001·Granted Feb 17, 2004·198 cites·93 claims
- 0295US7777217B2Inclusion-free uniform semi-insulating group III nitride substrate and methods for making sameKYMA TECHNOLOGIES INC·Filed 2006·Granted Aug 17, 2010·22 cites·10 claims
- 0393US7897490B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2006·Granted Mar 1, 2011·16 cites·26 claims
- 0489US9263266B2Group III nitride articles and methods for making sameKYMA TECHNOLOGIES INC·Filed 2015·Granted Feb 16, 2016·4 cites·22 claims
- 0589US8349711B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2011·Granted Jan 8, 2013·6 cites·18 claims
- 0689US7727874B2Non-polar and semi-polar GaN substrates, devices, and methods for making themKYMA TECHNOLOGIES INC·Filed 2008·Granted Jun 1, 2010·33 cites·33 claims
- 0779US9082890B1Group III nitride articles having nucleation layers, transitional layers, and bulk layersKYMA TECHNOLOGIES INC·Filed 2013·Granted Jul 14, 2015·2 cites·18 claims
- 0873US8637848B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2012·Granted Jan 28, 2014·1 cites·10 claims
- 0961US8871556B2Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancementKYMA TECHNOLOGIES INC·Filed 2013·Granted Oct 28, 2014·0 cites·16 claims
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