Assignee
LIANG JINGMEI
US·10 granted patents·456 citations·filing 2010–2012
Top patents by PatentIndex Score
10 records- 0197US8741788B2Formation of silicon oxide using non-carbon flowable CVD processesLIANG JINGMEI·Filed 2010·Granted Jun 3, 2014·61 cites·17 claims
- 0297US8551891B2Remote plasma burn-inLIANG JINGMEI·Filed 2012·Granted Oct 8, 2013·167 cites·20 claims
- 0397US8449942B2Methods of curing non-carbon flowable CVD filmsLIANG JINGMEI·Filed 2010·Granted May 28, 2013·70 cites·18 claims
- 0496US8647992B2Flowable dielectric using oxide linerLIANG JINGMEI·Filed 2010·Granted Feb 11, 2014·41 cites·15 claims
- 0596US8563445B2Conformal layers by radical-component CVDLIANG JINGMEI·Filed 2011·Granted Oct 22, 2013·49 cites·22 claims
- 0696US8445078B2Low temperature silicon oxide conversionLIANG JINGMEI·Filed 2011·Granted May 21, 2013·19 cites·11 claims
- 0793US8466067B2Post-planarization densificationLIANG JINGMEI·Filed 2011·Granted Jun 18, 2013·19 cites·19 claims
- 0892US8329587B2Post-planarization densificationLIANG JINGMEI·Filed 2010·Granted Dec 11, 2012·15 cites·16 claims
- 0990US8629067B2Dielectric film growth with radicals produced using flexible nitrogen/hydrogen ratioLIANG JINGMEI·Filed 2010·Granted Jan 14, 2014·11 cites·19 claims
- 1078US9404178B2Surface treatment and deposition for reduced outgassingLIANG JINGMEI·Filed 2012·Granted Aug 2, 2016·4 cites·9 claims
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