Assignee
MAGEPOWER SEMICONDUCTOR CORP
US·14 granted patents·1,240 citations·filing 1996–2000
Top patents by PatentIndex Score
14 records- 0197US6426260B1Switching speed improvement in DMO by implanting lightly doped region under gateMAGEPOWER SEMICONDUCTOR CORP·Filed 2000·Granted Jul 30, 2002·156 cites·21 claims
- 0296US6262453B1Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gateMAGEPOWER SEMICONDUCTOR CORP·Filed 1998·Granted Jul 17, 2001·170 cites·14 claims
- 0395US6031265AEnhancing DMOS device ruggedness by reducing transistor parasitic resistance and by inducing breakdown near gate runners and termination areaMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Feb 29, 2000·161 cites·15 claims
- 0495US6005271ASemiconductor cell array with high packing densityMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Dec 21, 1999·133 cites·19 claims
- 0594US5907776AMethod of forming a semiconductor structure having reduced threshold voltage and high punch-through toleranceMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted May 25, 1999·130 cites·29 claims
- 0692US6172398B1Trenched DMOS device provided with body-dopant redistribution-compensation region for preventing punch through and adjusting threshold voltageMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Jan 9, 2001·104 cites·10 claims
- 0791US6051468AMethod of forming a semiconductor structure with uniform threshold voltage and punch-through toleranceMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Apr 18, 2000·111 cites·21 claims
- 0883US6049104AMOSFET device to reduce gate-width without increasing JFET resistanceMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Apr 11, 2000·72 cites·16 claims
- 0981US6048759AGate/drain capacitance reduction for double gate-oxide DMOS without degrading avalanche breakdownMAGEPOWER SEMICONDUCTOR CORP·Filed 1998·Granted Apr 11, 2000·49 cites·19 claims
- 1074US5894150ACell density improvement in planar DMOS with farther-spaced body regions and novel gatesMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Apr 13, 1999·35 cites·7 claims
- 1172US5844277APower MOSFETs and cell topologyMAGEPOWER SEMICONDUCTOR CORP·Filed 1996·Granted Dec 1, 1998·33 cites·1 claims
- 1270US5973361ADMOS transistors with diffusion merged body regions manufactured with reduced number of masks and enhanced ruggednessMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Oct 26, 1999·42 cites·13 claims
- 1367US6404025B1MOSFET power device manufactured with reduced number of masks by fabrication simplified processesMAGEPOWER SEMICONDUCTOR CORP·Filed 1997·Granted Jun 11, 2002·27 cites·3 claims
- 1457US5998266AMethod of forming a semiconductor structure having laterally merged body layerMAGEPOWER SEMICONDUCTOR CORP·Filed 1996·Granted Dec 7, 1999·17 cites·11 claims
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