Assignee
MAJHI PRASHANT
US·6 granted patents·1 pending application·26 citations·filing 2008–2014
Top patents by PatentIndex Score
7 records- 0194US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 0289US8501508B2Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drainsMAJHI PRASHANT·Filed 2012·Granted Aug 6, 2013·7 cites·25 claims
- 0382US10355205B2Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the sameMAJHI PRASHANT·Filed 2014·Granted Jul 16, 2019·4 cites·24 claims
- 0455US9443936B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2013·Granted Sep 13, 2016·0 cites·11 claims
- 0555US8643079B2Nanocrystal formation using atomic layer deposition and resulting apparatusMAJHI PRASHANT·Filed 2008·Granted Feb 4, 2014·0 cites·26 claims
- 0648US8680575B2Semiconductor device and method of fabricationMAJHI PRASHANT·Filed 2011·Granted Mar 25, 2014·0 cites·11 claims
- 0747US2011147845A1Remote Doped High Performance Transistor Having Improved Subthreshold CharacteristicsMAJHI PRASHANT·Filed 2009·Application pending·0 cites
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