Assignee
MASUDA TAKEYOSHI
JP·16 granted patents·3 pending applications·94 citations·filing 2006–2012
Top patents by PatentIndex Score
19 records- 0196US8648349B2Semiconductor deviceMASUDA TAKEYOSHI·Filed 2010·Granted Feb 11, 2014·51 cites·4 claims
- 0284US8203151B2Semiconductor device and method for fabricating the sameMASUDA TAKEYOSHI·Filed 2010·Granted Jun 19, 2012·5 cites·8 claims
- 0381US8686435B2Silicon carbide semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Apr 1, 2014·4 cites·24 claims
- 0473USD701843SSemiconductor deviceMASUDA TAKEYOSHI·Filed 2011·Granted Apr 1, 2014·14 cites·1 claims
- 0573US8610132B2Semiconductor device and method for manufacturing semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Dec 17, 2013·2 cites·6 claims
- 0671US8765617B2Method of manufacturing semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Jul 1, 2014·2 cites·6 claims
- 0766US9006745B2Semiconductor device and fabrication method thereofMASUDA TAKEYOSHI·Filed 2011·Granted Apr 14, 2015·1 cites·1 claims
- 0866US8981384B2Semiconductor device and method for manufacturing sameMASUDA TAKEYOSHI·Filed 2011·Granted Mar 17, 2015·1 cites·9 claims
- 0964USD692843SSemiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Nov 5, 2013·12 cites·1 claims
- 1061US8921903B2Lateral junction field-effect transistorMASUDA TAKEYOSHI·Filed 2007·Granted Dec 30, 2014·2 cites·4 claims
- 1151US9054022B2Method for manufacturing semiconductor deviceMASUDA TAKEYOSHI·Filed 2011·Granted Jun 9, 2015·0 cites·7 claims
- 1248US2012228640A1Semiconductor device and method for manufacturing sameMASUDA TAKEYOSHI·Filed 2011·Application pending·0 cites
- 1347US8803294B2Semiconductor device and method for manufacturing sameMASUDA TAKEYOSHI·Filed 2012·Granted Aug 12, 2014·0 cites·17 claims
- 1446US8524585B2Method of manufacturing semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Granted Sep 3, 2013·0 cites·5 claims
- 1544US8283674B2Semiconductor device with silicon carbide channelMASUDA TAKEYOSHI·Filed 2006·Granted Oct 9, 2012·0 cites·2 claims
- 1639US9184276B2Method and apparatus for manufacturing silicon carbide semiconductor deviceMASUDA TAKEYOSHI·Filed 2011·Granted Nov 10, 2015·0 cites·11 claims
- 1739US2012193643A1Semiconductor deviceMASUDA TAKEYOSHI·Filed 2012·Application pending·0 cites
- 1838US2012168774A1Silicon carbide substrate and method for manufacturing sameMASUDA TAKEYOSHI·Filed 2011·Application pending·0 cites
- 1937US8901568B2Silicon carbide insulating gate type semiconductor device and fabrication method thereofMASUDA TAKEYOSHI·Filed 2011·Granted Dec 2, 2014·0 cites·14 claims
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