Assignee

MC ELECTRONICS CO LTD

JP·1 granted patent·115 citations·filing 1996–1996

Technology mixH01J1 H05H1

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0186US5965034AHigh frequency plasma process wherein the plasma is executed by an inductive structure in which the phase and anti-phase portion of the capacitive currents between the inductive structure and the plasma are balancedMC ELECTRONICS CO LTD·Filed 1996·Granted Oct 12, 1999·115 cites·20 claims

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