Assignee
MIYOSHI TOMOYUKI
JP·3 granted patents·1 pending application·4 citations·filing 2009–2012
Technology mixH10D4
Top patents by PatentIndex Score
4 records- 0160US8217425B2Semiconductor deviceMIYOSHI TOMOYUKI·Filed 2009·Granted Jul 10, 2012·2 cites·8 claims
- 0259US8546213B2Method of manufacturing semiconductor device having high voltage ESD protective diodeMIYOSHI TOMOYUKI·Filed 2010·Granted Oct 1, 2013·2 cites·10 claims
- 0346US8525291B2Semiconductor deviceMIYOSHI TOMOYUKI·Filed 2012·Granted Sep 3, 2013·0 cites·3 claims
- 0433US2011278669A1Semiconductor deviceMIYOSHI TOMOYUKI·Filed 2011·Application pending·0 cites
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