Assignee
MORIOKA SATORU
JP·1 granted patent·3 pending applications·0 citations·filing 2007–2011
Top patents by PatentIndex Score
4 records- 0133US8137460B2Manufacturing method of GaN thin film template substrate, GaN thin film template substrate and GaN thick film single crystalMORIOKA SATORU·Filed 2007·Granted Mar 20, 2012·0 cites·9 claims
- 0225US2012256297A1Method for producing nitride compound semiconductor substrate, and nitride compound semiconductor free-standing substrateMORIOKA SATORU·Filed 2011·Application pending·0 cites
- 0325US2012251428A1Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystalMORIOKA SATORU·Filed 2011·Application pending·0 cites
- 0425US2011215439A1Epitaxial growth substrate, manufacturing method thereof, nitride-based compound semiconductor substrate, and nitride-based compound semiconductor self-supporting substrateMORIOKA SATORU·Filed 2011·Application pending·0 cites
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