Assignee
MURTHY ANAND S
US·4 granted patents·110 citations·filing 2006–2010
Top patents by PatentIndex Score
4 records- 0197US8901537B2Transistors with high concentration of boron doped germaniumMURTHY ANAND S·Filed 2010·Granted Dec 2, 2014·56 cites·25 claims
- 0295US8598003B2Semiconductor device having doped epitaxial region and its methods of fabricationMURTHY ANAND S·Filed 2009·Granted Dec 3, 2013·50 cites·27 claims
- 0384US9640634B2Field effect transistor structure with abrupt source/drain junctionsMURTHY ANAND S·Filed 2010·Granted May 2, 2017·4 cites·16 claims
- 0440US8642413B2Formation of strain-inducing films using hydrogenated amorphous siliconMURTHY ANAND S·Filed 2006·Granted Feb 4, 2014·0 cites·16 claims
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