Assignee
NAKABAYASHI MASASHI
JP·6 granted patents·8 citations·filing 2005–2011
Top patents by PatentIndex Score
6 records- 0177US8673254B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2011·Granted Mar 18, 2014·3 cites·6 claims
- 0274US9068277B2Apparatus for manufacturing single-crystal silicon carbideNAKABAYASHI MASASHI·Filed 2009·Granted Jun 30, 2015·2 cites·8 claims
- 0366US9777403B2Single-crystal silicon carbide and single-crystal silicon carbide waferNAKABAYASHI MASASHI·Filed 2009·Granted Oct 3, 2017·2 cites·11 claims
- 0462US8795624B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2005·Granted Aug 5, 2014·1 cites·9 claims
- 0562US8491719B2Silicon carbide single crystal, silicon carbide single crystal wafer, and method of production of sameNAKABAYASHI MASASHI·Filed 2009·Granted Jul 23, 2013·0 cites·8 claims
- 0649US8178389B2Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the sameNAKABAYASHI MASASHI·Filed 2010·Granted May 15, 2012·0 cites·13 claims
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