Assignee
NANO SILICON PTE LTD
SG·9 granted patents·81 citations·filing 2001–2004
Top patents by PatentIndex Score
9 records- 0172US6507090B1Fully silicide cascaded linked electrostatic discharge protectionNANO SILICON PTE LTD·Filed 2001·Granted Jan 14, 2003·19 cites·18 claims
- 0269US7154150B2Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocksNANO SILICON PTE LTD·Filed 2004·Granted Dec 26, 2006·12 cites·3 claims
- 0365US6762560B1High speed over-sampler application in a serial to parallel converterNANO SILICON PTE LTD·Filed 2003·Granted Jul 13, 2004·24 cites·9 claims
- 0459US6444510B1Low triggering N MOS transistor for ESD protection working under fully silicided process without silicide blocksNANO SILICON PTE LTD·Filed 2001·Granted Sep 3, 2002·7 cites·5 claims
- 0555US6589833B2ESD parasitic bipolar transistors with high resistivity regions in the collectorNANO SILICON PTE LTD·Filed 2001·Granted Jul 8, 2003·6 cites·8 claims
- 0653US7009435B2Output buffer with controlled slew rate for driving a range of capacitive loadsNANO SILICON PTE LTD·Filed 2004·Granted Mar 7, 2006·7 cites·28 claims
- 0748US6787856B2Low triggering N MOS transistor for electrostatic discharge protection deviceNANO SILICON PTE LTD·Filed 2002·Granted Sep 7, 2004·3 cites·5 claims
- 0844US6787880B2ESD parasitic bipolar transistors with high resistivity regions in the collectorNANO SILICON PTE LTD·Filed 2003·Granted Sep 7, 2004·2 cites·28 claims
- 0940US7170963B2Clock recovery method by phase selectionNANO SILICON PTE LTD·Filed 2003·Granted Jan 30, 2007·1 cites·22 claims
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