Assignee
NEXFLASH TECHNOLOGIES INC
US·14 granted patents·1 pending application·615 citations·filing 1997–2003
Top patents by PatentIndex Score
15 records- 0193US6873004B1Virtual ground single transistor memory cell, memory array incorporating same, and method of operation thereofNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Mar 29, 2005·97 cites·14 claims
- 0293US6847550B2Nonvolatile semiconductor memory having three-level memory cells and program and read mapping circuits thereforNEXFLASH TECHNOLOGIES INC·Filed 2002·Granted Jan 25, 2005·76 cites·37 claims
- 0393US6826080B2Virtual ground nonvolatile semiconductor memory array architecture and integrated circuit structure thereforNEXFLASH TECHNOLOGIES INC·Filed 2002·Granted Nov 30, 2004·94 cites·19 claims
- 0491US6771541B1Method and apparatus for providing row redundancy in nonvolatile semiconductor memoryNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Aug 3, 2004·62 cites·15 claims
- 0587US6747899B2Method and apparatus for multiple byte or page mode programming of a flash memory arrayNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted Jun 8, 2004·55 cites·11 claims
- 0686US6731544B2Method and apparatus for multiple byte or page mode programming of a flash memory arrayNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted May 4, 2004·45 cites·11 claims
- 0784US6909639B2Nonvolatile memory having bit line discharge, and method of operation thereofNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Jun 21, 2005·34 cites·19 claims
- 0884US6775184B1Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereofNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Aug 10, 2004·41 cites·23 claims
- 0972US5991198ALocal row decoder and associated control logic for fowler-nordheim tunneling based flash memoryNEXFLASH TECHNOLOGIES INC·Filed 1998·Granted Nov 23, 1999·36 cites·12 claims
- 1071US5978275AErase and program control state machines for flash memoryNEXFLASH TECHNOLOGIES INC·Filed 1998·Granted Nov 2, 1999·35 cites·9 claims
- 1167US6768671B1Nonvolatile memory and method of operation thereof to control erase disturbNEXFLASH TECHNOLOGIES INC·Filed 2003·Granted Jul 27, 2004·16 cites·17 claims
- 1252US5973961ADivided bit line system for non-volatile memory devicesNEXFLASH TECHNOLOGIES INC·Filed 1998·Granted Oct 26, 1999·18 cites·9 claims
- 1339US6728140B2Threshold voltage convergenceNEXFLASH TECHNOLOGIES INC·Filed 2001·Granted Apr 27, 2004·2 cites·51 claims
- 1435US6171907B1Method for fabricating tunnel window in EEPROM cell with reduced cell pitchNEXFLASH TECHNOLOGIES INC·Filed 1997·Granted Jan 9, 2001·4 cites·3 claims
- 1531US2004153902A1Serial flash integrated circuit having error detection and correctionNEXFLASH TECHNOLOGIES INC·Filed 2003·Application pending·0 cites
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