Assignee
NIIMI HIROAKI
US·12 granted patents·1 pending application·19 citations·filing 2007–2012
Top patents by PatentIndex Score
13 records- 0187US9202884B2Methods to enhance effective work function of mid-gap metal by incorporating oxygen and hydrogen at a low thermal budgetNIIMI HIROAKI·Filed 2011·Granted Dec 1, 2015·6 cites·11 claims
- 0273US8802577B2Method for manufacturing a semiconductor device using a nitrogen containing oxide layerNIIMI HIROAKI·Filed 2011·Granted Aug 12, 2014·3 cites·17 claims
- 0372US8202773B2Engineered oxygen profile in metal gate electrode and nitrided high-k gate dielectrics structure for high performance PMOS devicesNIIMI HIROAKI·Filed 2009·Granted Jun 19, 2012·5 cites·11 claims
- 0471US8482080B2Engineered oxygen profile in metal gate electrode and nitrided high-K gate dielectrics structure for high performance PMOS devicesNIIMI HIROAKI·Filed 2012·Granted Jul 9, 2013·3 cites·9 claims
- 0561US8617954B2Formation of nitrogen containing dielectric layers having an improved nitrogen distributionNIIMI HIROAKI·Filed 2007·Granted Dec 31, 2013·1 cites·12 claims
- 0654US8828855B2Transistor performance using a two-step damage annealNIIMI HIROAKI·Filed 2007·Granted Sep 9, 2014·0 cites·5 claims
- 0751US8058122B2Formation of metal gate electrode using rare earth alloy incorporated into mid gap metalNIIMI HIROAKI·Filed 2008·Granted Nov 15, 2011·0 cites·5 claims
- 0849US8816446B2Formation of metal gate electrode using rare earth alloy incorporated into mid gap metalNIIMI HIROAKI·Filed 2011·Granted Aug 26, 2014·0 cites·17 claims
- 0949US8216913B2Strain modulation in active areas by controlled incorporation of nitrogen at si-SiO2 interfaceNIIMI HIROAKI·Filed 2008·Granted Jul 10, 2012·1 cites·14 claims
- 1048US8492291B2Formation of gate dielectrics with uniform nitrogen distributionNIIMI HIROAKI·Filed 2011·Granted Jul 23, 2013·0 cites·22 claims
- 1147US8803253B2Replacement metal gate process for CMOS integrated circuitsNIIMI HIROAKI·Filed 2012·Granted Aug 12, 2014·0 cites·8 claims
- 1246US8828825B2Method of substantially reducing the formation of SiGe abnormal growths on polycrystalline electrodes for strained channel PMOS transistorsNIIMI HIROAKI·Filed 2012·Granted Sep 9, 2014·0 cites·20 claims
- 1344US2008268603A1Transistor performance using a two-step damage annealNIIMI HIROAKI·Filed 2007·Application pending·0 cites
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